Travelled to:
1 × France
1 × USA
Collaborated with:
Y.Chen X.Yuan D.Scagnelli J.Mecke J.Gross R.A.Rutenbar K.Johnson P.Kempf T.H.Y.Meng R.Rofougaran J.Spoto D.Goren M.Zelikson R.Gordin I.A.Wagner A.Barger A.Amir B.Livshitz A.Sherman Y.Tretiakov R.A.Groves J.Park D.L.Jordan S.E.Strang R.Singh C.E.Dickey
Talks about:
design (3) technolog (2) signal (2) mix (2) interconnect (1) methodolog (1) transmiss (1) bandwidth (1) demonstr (1) right (1)
Person: David L. Harame
DBLP: Harame:David_L=
Contributed to:
Wrote 3 papers:
- DATE-DF-2004-ChenYSMGH #design #using
- Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology (YC, XY, DS, JM, JG, DLH), pp. 22–27.
- DAC-2003-GorenZGWBALSTGPJSSDH #design #modelling
- On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devices (DG, MZ, RG, IAW, AB, AA, BL, AS, YT, RAG, JP, DLJ, SES, RS, CED, DLH), pp. 724–727.
- DAC-2003-RutenbarHJKMRS
- Mixed signals on mixed-signal: the right next technology (RAR, DLH, KJ, PK, THYM, RR, JS), pp. 278–279.