Simulation-based reusable posynomial models for MOS transistor parameters
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Varun Aggarwal, Una-May O'Reilly
Simulation-based reusable posynomial models for MOS transistor parameters
DATE, 2007.

DATE 2007
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@inproceedings{DATE-2007-AggarwalO,
	author        = "Varun Aggarwal and Una-May O'Reilly",
	booktitle     = "{Proceedings of the 11th Conference on Design, Automation and Test in Europe}",
	doi           = "10.1145/1266366.1266384",
	isbn          = "978-3-9810801-2-4",
	pages         = "69--74",
	publisher     = "{ACM}",
	title         = "{Simulation-based reusable posynomial models for MOS transistor parameters}",
	year          = 2007,
}

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